Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device
نویسندگان
چکیده
منابع مشابه
Non-equilibrium spin accumulation in ferromagnetic single-electron transistors
We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the ele...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2011
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.84.180413